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| Final data SPW11N80C3 VDS RDS(on) ID 800 0.45 11 P-TO247 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated V A Type SPW11N80C3 Package P-TO247 Ordering Code Q67040-S4440 Marking 11N80C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 C TC = 100 C A 11 7.1 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 2.2 A, VDD = 50 V I D puls EAS 33 470 0.2 11 6 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=11A, VDS=480V, T j=125C A V/ns V W C 2003-07-03 Gate source voltage VGS VGS Ptot T j , T stg Page 1 Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature 156 -55... +150 Final data SPW11N80C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 640 V, ID = 11 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=11A breakdown voltage Gate threshold voltage Zero gate voltage drain current 800 2.1 Values typ. 870 3 0.5 0.39 1.1 0.7 max. 3.9 A 20 200 100 0.45 nA Symbol min. RthJC RthJA - Values typ. max. 0.8 62 260 Unit K/W C Tsold Unit V VGS(th) I DSS ID=680, VGS=VDS V DS=800V, VGS=0V, Tj=25C, Tj=150C Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=7.1A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-07-03 Final data SPW11N80C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=7.1A V GS=0V, V DS=25V, f=1MHz Values typ. 7.5 1600 800 40 44.3 33.9 25 15 72 7 max. 82 10 - Unit S pF Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 480V pF td(on) tr td(off) tf V DD=400V, V GS=0/10V, ID=11A, RG =7.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=640V, ID=11A - 6.5 30 58 6 75 - nC VDD=640V, ID=11A, VGS=0 to 10V V(plateau) VDD=640V, ID=11A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-07-03 Final data SPW11N80C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt VGS=0V, IF=IS VR=640V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 550 10 33 1000 max. 11 33 1.2 - Unit A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.012 0.023 0.043 0.138 0.158 0.064 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0002493 0.0009399 0.001298 0.003617 0.01 0.083 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-07-03 Final data SPW11N80C3 1 Power dissipation Ptot = f (TC) 170 SPW11N80C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 2 W 140 A 10 1 120 Ptot 100 10 0 80 60 40 20 0 0 10 -2 0 10 10 -1 ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 C 160 10 1 10 2 TC 10 V VDS 3 3 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 4 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 K/W 10 0 ZthJC 10 -1 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 2003-07-03 Final data SPW11N80C3 5 Transient thermal impedance FullPAK ZthJC = f (t p) parameter: D = tp/t 6 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 35 A 20V 8V 7V 25 ID 20 6.5V 15 6V 10 5.5V 5 5V 4V 0 0 4 8 12 16 20 26 V VDS 7 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 18 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 3 A 20V 6.5V 6V 4V 14 12 10 8 2.6 4.5V 5V RDS(on) 2.4 2.2 ID 5.5V 5.5V 2 1.8 5V 6V 6.5V 20V 6 4 2 0 0 4.5V 1.6 1.4 1.2 4V 1 26 V VDS 0.8 0 2 4 6 8 10 12 14 4 8 12 16 20 A 18 ID Page 6 2003-07-03 Final data SPW11N80C3 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7.1 A, VGS = 10 V 2.6 SPW11N80C3 10 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 35 A 2.2 2 25C RDS(on) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 C 25 ID 20 15 150C 10 98% typ 5 180 0 0 2 4 6 8 10 12 14 16 Tj V 20 VGS 11 Typ. gate charge VGS = f (QGate) 12 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPW11N80C3 parameter: ID = 11 A pulsed 16 V SPW11N80C3 A 12 0.2 VDS max VGS 10 1 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) nC 10 0.8 VDS max 4 2 10 -1 0 0 0 20 40 60 80 110 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Page 7 VSD 2003-07-03 Final data SPW11N80C3 13 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 11 14 Avalanche energy EAS = f (Tj) par.: ID = 2.2 A, V DD = 50 V 500 A 9 8 7 6 mJ 400 350 300 250 5 4 3 2 1 0 -3 10 10 -2 EAS Tj(START)=25C Tj(START)=125C -1 0 1 2 IAR 200 150 100 50 4 10 10 10 10 s 10 tAR 0 20 40 60 80 100 120 C 150 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) 980 SPW11N80C3 16 Avalanche power losses PAR = f (f ) parameter: E AR=0.2mJ 200 V 940 V(BR)DSS 920 W PAR 100 50 04 10 900 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 C 180 10 5 Hz f 10 6 Tj Page 8 2003-07-03 Final data SPW11N80C3 17 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 18 Typ. Coss stored energy Eoss=f(VDS) 12 pF Ciss 10 3 J Eoss 10 2 8 C Coss 6 4 10 1 Crss 2 10 0 0 100 200 300 400 500 600 V 800 VDS 0 0 100 200 300 400 500 600 V 800 VDS Definition of diodes switching characteristics Page 9 2003-07-03 Final data SPW11N80C3 P-TO-247-3-1 15.9 6.35 o3.61 5.03 2.03 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 41.22 2.97 x 0.127 5 5.94 20 Page 10 2003-07-03 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPW11N80C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2003-07-03 |
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